No | Part number | Description ( Function ) | Manufacturers | |
7 | DMH | ELECTRIC DOUBLE LAYER CAPACITORS DMH SERIES ELECTRIC DOUBLE LAYER CAPACITORS NEW DMH |
Rubycon |
|
6 | DMHC10H170SFJ | 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCEADDIVNAFNOCREM IANTIFOONRMATION DMHC10H170SFJ 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Device BVDSS Q1 & Q4 100V Q2 & Q3 -100V RDS(ON) MAX 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V 250mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V ID TA = +25°C 2.9A 2.6A -2.3A -2.1A Low On-Resistance Low Input Capacitance Totally Lead-Free |
Diodes |
|
5 | DMHC3025LSD | 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCE INNEFWORPRMOADTIUOCNT DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device V(BR)DSS N-Channel 30V P-Channel -30V RDS(ON) max 25mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V 50mΩ @ VGS = -10V 80mΩ @ VGS = -4.5V ID max TA = +25°C 6.0 4.6 -4.2 -3.2 Description This new generation complementary MOSFET H-Bridge features low on-resistanc |
Diodes |
|
4 | DMHC3025LSDQ | 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVANCE INNEFWORPRMOADTIUOCNT DMHC3025LSDQ 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device V(BR)DSS N-Channel 30V P-Channel -30V RDS(ON) max 25mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V 50mΩ @ VGS = -10V 80mΩ @ VGS = -4.5V ID max TA = +25°C 6.0 4.6 -4.2 -3.2 Description and Applications This new generation complementary MOSFET H-Bridge feature |
Diodes |
|
3 | DMHC4035LSD | 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel V(BR)DSS 40V -40V RDS(ON) max 45mΩ @ VGS = 10V 58mΩ @ VGS = 4.5V 65mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V ID max TA = +25°C 4.5A 4A -3.7A -2.9A Description This new generation complementary MOSFET H-Bridge features low on |
Diodes |
|
2 | DMHC4035LSDQ | 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE ADVNAENWCEP IRNNOEFDWOURPCRMTOADTIUOCNT DMHC4035LSDQ 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Device N-Channel P-Channel V(BR)DSS 40V -40V RDS(ON) max 45mΩ @ VGS = 10V 58mΩ @ VGS = 4.5V 65mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V ID max TA = +25°C 4.5A 4A -3.7A -2.9A Description and Applications This new generation complementary MOSFET H-Brid |
Diodes |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |