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DMG6402LVT PDF Datasheet

The DMG6402LVT is 30V N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMG6402LVT
30V N-CHANNEL ENHANCEMENT MODE MOSFET

NAEDWVAPNRCOED IUNCFTORMATION DMG6402LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) max 30m @ VGS = 10V 42m @ VGS = 4.5V ID TA = +25°C 6A 5A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power m

Diodes
Diodes
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DMG6402LDM   N-CHANNEL ENHANCEMENT MODE MOSFET

DMG6402LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • • • • • • • Low RDS(ON) Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant

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2N6402   Silicon Controlled Rectifiers

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2N6402   (2N6400 - 2N6405) Silicon Controlled Rectifiers

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half–wave silicon gate–controlled, s

Motorola Semiconductor
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2N6402   SILICON CONTROLLED RECTIFIERS

2N6400-2N6405 SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit

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2N6402   Silicon Controlled Rectifiers

2N6400 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. Fea

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