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Datasheet DMG3415UFY4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | DMG3415UFY4 | P-CHANNEL ENHANCEMENT MODE MOSFET DMG3415UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
• Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Desig |
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| 1 | DMG3415UFY4Q | P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMG3415UFY4Q
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -16V
RDS(ON) max 39mΩ @ VGS = -4.5V 52mΩ @ VGS = -2.5V 65mΩ @ VGS = -1.8V
ID max TA = +25°C
-2.5A
-2.1A
-1.8A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS |
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