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DMG2302UQ PDF Datasheet

The DMG2302UQ is N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DMG2302UQ
N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary BVDSS 20V RDS(ON) max 90mΩ @ VGS = 4.5V 120mΩ @ VGS = 2.5V ID max TA = +25°C 4.2A 2.7A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  General Purpose Interfacing Switch  Power Mana

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Recommended search results related to DMG2302UQ

Part No Description ( Function) Manufacturers PDF
DMG2302U   N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliab

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DMG2302UK   N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMG2302UK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) Max 90mΩ @ VGS = 4.5V 120mΩ @ VGS = 2.5V ID Max TA = +25°C 2.8A 2.4A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet mai

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Microsemi Corporation
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0230200L   Silicon Controlled Rectifier

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2302   Class C Microwave

2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness.

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