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DME3055 PDF Datasheet

The DME3055 is SilICon Beam-lead And Chip Schottky Barrier Mixer Diodes. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DME3055
Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

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Part No Description ( Function) Manufacturers PDF
2N3055   POWER TRANSISTORS(15A/50V/115W)

A A A

Mospec Semiconductor
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2N3055   15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emitter Saturation Volt

Motorola  Inc
Motorola Inc
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2N3055   60V, 15A, NPN SILICON POWER TRANSISTORS

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Audio amplifier Descrip

STMicroelectronics
STMicroelectronics
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2N3055   NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES

Siemens Semiconductor Group
Siemens Semiconductor Group
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2N3055   COMPLEMENTARY SILICON POWER TRANSISTORS

Boca Semiconductor Corp. (BSC) http://www.bocasemi.com A http://www.bocasemi.com A http://www.bocasemi.com

Boca Semiconductor Corporation
Boca Semiconductor Corporation
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[1]    

List of most widely used semiconductors

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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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