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DK48N88 PDF Datasheet

The DK48N88 is N-channel Trench Process Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DK48N88
N-Channel Trench Process Power MOSFET

DK48N88 ® Pb Free Plating Product DK48N88 Pb N-Channel Trench Process Power MOSFET Transistors General Description The DK48N88 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V;ID=88

Thinki Semiconductor
Thinki Semiconductor
pdf

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DK48N18   N-Channel Trench Process Power MOSFET

DK48N18 ® Pb Free Plating Product DK48N18 Pb 70V,158A N-Channel Trench Process Power MOSFET General Description The DK48N18 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable fo

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DK48N75   N-Channel Trench Process Power MOSFET

DK48N75 ® Pb Free Plating Product DK48N75 Pb 70V,68A N-Channel Trench Process Power MOSFET General Description The DK48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for

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DK48N78   N-Channel Trench Process Power MOSFET

DK48N78 ® Pb Free Plating Product DK48N78 Pb 70V,80A N-Channel Trench Process Power MOSFET General Description The DK48N78 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for

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DK48N80   N-Channel Trench Process Power MOSFET

DK48N80 ® Pb Free Plating Product DK48N80 Pb N-Channel Trench Process Power MOSFET Transistors General Description The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable

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[1]    

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