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DK2414FCM PDF Datasheet

The DK2414FCM is Fast Switching Thyristor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DK2414FCM
Fast Switching Thyristor

DK24..FC DK24..FC Fast Switching Thyristor Replaces January 2000 version, DS4268-3.0 DS4268-4.0 July 2001 FEATURES s Low Switching Losses At High Frequency s Fully Characterised For Operation Up To 20kHz KEY PARAMETERS VDRM IT(RMS) ITSM dVdt dI/dt tq 2000V 260A 4000A 200V/µs 500A/µs 50µs APPLICATIONS s High Power Inverters And Choppers s UPS s AC Motor Drives s Induction

Dynex
Dynex
pdf

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Recommended search results related to DK2414FCM

Part No Description ( Function) Manufacturers PDF
DK2414FCK   Fast Switching Thyristor

DK24..FC DK24..FC Fast Switching Thyristor Replaces January 2000 version, DS4268-3.0 DS4268-4.0 July 2001 FEATURES s Low Switching Losses At High Frequency s Fully Characterised For Operation Up To 20kHz KEY PARAMETERS VDRM IT(RMS) ITSM dVdt dI/dt tq 2000V 260A 4000A 200V/µs

Dynex
Dynex
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200210H24148O.001   Diode ( Rectifier )

American Microsemiconductor
American Microsemiconductor
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200210H24148O.002   Diode ( Rectifier )

American Microsemiconductor
American Microsemiconductor
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2SC2414   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2414 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM R

Inchange Semiconductor
Inchange Semiconductor
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2SD2414   Silicon NPN Triple Diffused Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) 2SD2414(SM) High Current Switching Applications Power Amplifier Applications Unit: mm · Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics Col

Toshiba Semiconductor
Toshiba Semiconductor
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[1]    

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