|
|
Datasheet DIM250PLM33-TL000 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | DIM250PLM33-TL000 | IGBT Chopper Module DIM250PLM33-TL000
IGBT Chopper Module
DS6115-1 July 2013 (LN30664)
FEATURES
Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base with AlN Substrates
KEY PARAMETERS
VCES VCE(sat) * (typ) IC | Dynex | igbt |
DIM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | DIM100 | SIMM/DIMM SOCKET
DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet 4 U .com
DIM100
AUK Contractors data | | |
2 | DIM100PHM33-A000 | IGBT Power Module
DIM100PHM33-A000
DIM100PHM33-A000
Half Bridge IGBT Module
PDS5708-1.3 January 2004
FEATURES
I I I I
KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.4V 100A 200A
10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolate Dynex Semiconductor igbt | | |
3 | DIM100PHM33-F000 | IGBT Power Module
DIM100PHM33-F000
DIM100PHM33-F000
Half Bridge IGBT Module
PDS5764-1.1 April 2004
FEATURES
I I I I
KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 2.8V 100A 200A
Soft Punch Through Silicon 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates Hi Dynex Semiconductor igbt | | |
4 | DIM100WHS12-A000 | IGBT Power Module
DIM100WHS12-A000
DIM100WHS12-A000
Half Bridge IGBT Module
Replaces February 2004 version, issue DS5735-1.0 DS5735-2.0 May 2004
FEATURES
I I I
10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate
KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) Dynex Semiconductor igbt | | |
5 | DIM100WHS12-E000 | IGBT Power Module
DIM100WHS12-E000
DIM100WHS12-E000
Half Bridge IGBT Module
PDS5710-1.1 January 2004
FEATURES
I I I I
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 1.7V Dynex Semiconductor igbt | | |
6 | DIM100WHS17-A000 | IGBT Power Module
DIM100WHS17-A000
DIM100WHS17-A000
Half Bridge IGBT Module
PDS5715-1.1 Febuary 2004
FEATURES
I I I
10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 100A 200A
*(measured a Dynex Semiconductor igbt | | |
7 | DIM100WHS17-E000 | IGBT Power Module
DIM100WHS17-E000
DIM100WHS17-E000
Half Bridge IGBT Module
PDS5719-1.2 February 2004
FEATURES
I I I I
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1700V 2.0 Dynex Semiconductor igbt | |
Esta página es del resultado de búsqueda del DIM250PLM33-TL000. Si pulsa el resultado de búsqueda de DIM250PLM33-TL000 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |