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DG2729 PDF Datasheet

The DG2729 is (dg2727 - Dg2729) Dual Spst Analog Switch. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DG2729
(DG2727 - DG2729) Dual SPST Analog Switch

DG2727, DG2728, DG2729 Vishay Siliconix 0.65-Ω, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch DESCRIPTION The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail power supply. Audio signals can swing below ground down to V+ - 4.3 V

Vishay Siliconix
Vishay Siliconix
pdf

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Recommended search results related to DG2729

Part No Description ( Function) Manufacturers PDF
2729-125   Radar

2729-125 125 Watts, 36 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz ban

Advanced Power Technology
Advanced Power Technology
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2729-170   Radar

2729-170R2 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to

Advanced Power Technology
Advanced Power Technology
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2729-170   Radar

2729-170R4 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to

Microsemi Corporation
Microsemi Corporation
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2SK2729   Silicon N Channel MOS FET High Speed Power Switching

2SK2729 Silicon N Channel MOS FET High Speed Power Switching ADE-208-455 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2729 Absolute Ma

Hitachi Semiconductor
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AM2729-110   S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 105 W MIN. WITH 6.5 dB G

STMicroelectronics
STMicroelectronics
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[1]    

List of most widely used semiconductors

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1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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