No | Part number | Description ( Function ) | Manufacturers | |
1 | DG2729 | (DG2727 - DG2729) Dual SPST Analog Switch DG2727, DG2728, DG2729 Vishay Siliconix 0.65-Ω, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch DESCRIPTION The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail power supply. Audio signals can swing below ground down to V+ - 4.3 V |
Vishay Siliconix |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to DG2729 |
Part No | Description ( Function) | Manufacturers | |
2729-125 | Radar 2729-125 125 Watts, 36 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-125 is an internally matched, COMMON BASE bipolar transistor capable of providing 125 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz ban |
Advanced Power Technology |
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2729-170 | Radar 2729-170R2 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to |
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2729-170 | Radar 2729-170R4 2729-170 170 Watts, 38 Volts, 100µs, 10% Radar 2700-2900 MHz GENERAL DESCRIPTION The 2729-170 is an internally matched, COMMON BASE bipolar transistor capable of providing 170 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to |
Microsemi Corporation |
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2SK2729 | Silicon N Channel MOS FET High Speed Power Switching 2SK2729 Silicon N Channel MOS FET High Speed Power Switching ADE-208-455 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2729 Absolute Ma |
Hitachi Semiconductor |
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AM2729-110 | S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 105 W MIN. WITH 6.5 dB G |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |