No | Part number | Description ( Function ) | Manufacturers | |
1 | DFP830 | N-Channel MOSFET DFP830 N-Channel MOSFET Features RDS(on) (Max 1.5 )@VGS=10V 1.Gate 2.Drain Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested BVDSS = 500V RDS(ON) = 1.5 ohm ID = 4.5A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS te |
DnI |
0  1  2  3  4  5  6  7  8 9 |
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List of most widely used semiconductors
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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