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Datasheet DFM1200AXM45-TS001 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1DFM1200AXM45-TS001Fast Recovery Diode Module

DFM1200AXM45-TS001 Fast Recovery Diode Module DS6146-1 April 2014 (LN31501) FEATURES  10.2kV Isolation Package  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Triple Diodes Can Be Paralleled For 3600A Rating KEY
Dynex
Dynex		diode


DFM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1DFM1000NXM33-TS000Fast Recovery Diode Module

DFM1000NXM33-TS000 Fast Recovery Diode Module DS6094-1 April 2013 (LN30404) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  High Current Density Enhanced DMOS  Dual Diodes Can Be Paralleled For 2000A Rati
Dynex
Dynex		diode
2DFM1200AXM45-TS000Fast Recovery Diode Module

DFM1200AXM45-TS000 Fast Recovery Diode Module DS6132-1 October 2013 (LN31071) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Triple Diodes Can Be Paralleled For 3600A Rating KEY PARAMETERS VRRM VF IF IFM
Dynex
Dynex		diode
3DFM1200AXM45-TS001Fast Recovery Diode Module

DFM1200AXM45-TS001 Fast Recovery Diode Module DS6146-1 April 2014 (LN31501) FEATURES  10.2kV Isolation Package  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Triple Diodes Can Be Paralleled For 3600A Rating KEY
Dynex
Dynex		diode
4DFM1200EXM12-A000Fast Recovery Diode Module Preliminary Information

DFM1200EXM12-A000 DFM1200EXM12-A000 Fast Recovery Diode Module Preliminary Information DS5481-1.2 July 2001 FEATURES s Low Reverse Recovery Charge s High Switching Speed s Low Forward Voltage Drop s Isolated Base s Dual Diodes Can Be Paralleled for 3600A Rating s MMC Baseplate With AlN Substrates
Dynex
Dynex		diode
5DFM1200EXM18-A000Fast Recovery Diode Module

Replaces DS5913-1.0 DFM1200EXM18-A000 Fast Recovery Diode Module DS5913-2 April 2011 (LN28313) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates  Triple Diodes can be paralleled for 3600A rating  Lead Free
Dynex
Dynex		diode
6DFM1200EXS12-A000Fast Recovery Diode Module

Replaces DS5851-1.2 DFM1200EXS12-A000 Fast Recovery Diode Module DS5851-2 August 2011 (LN28651) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated Cu Base with Al2O3 Substrates  Triple Diodes can be paralleled for 3600A rating  Lead Free
Dynex
Dynex		diode
7DFM1200FXM12-A000Fast Recovery Diode Module Preliminary Information

DFM1200FXM12-A000 DFM1200FXM12-A000 Fast Recovery Diode Module Preliminary Information DS5480-1.2 July 2001 FEATURES s Low Reverse Recovery Charge s High Switching Speed s Low Forward Voltage Drop s Isolated Base s Dual Diodes Can Be Paralleled for 2400A Rating s MMC Baseplate With AlN Substrates
Dynex
Dynex		diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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