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Datasheet DFD2N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | DFD2N60 | N-Channel MOSFET
DFD2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.1A
3. Source
General Description
This N-channe |  DnI | mosfet |
DFD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | DFD05T | 0.5A Power Rectifier Ordering number:EN2373
DFD05T
Diffused Junction Type Silicon Diode
0.5A Power Rectifier
Features
· High-speed switching use. · Plastic molded structure. · Reverse recovery time trr=0.15µs max (B, C, E, G). trr=0.3µs max (J, L, N, R, T). · Peak reverse voltage:VRM=100 to 1700V · Average rect  Sanyo Semicon Device rectifier | | |
| 2 | DFD1N60 | N-Channel MOSFET
DFD2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.1A
3. Source
General Description
This N-channe DnI mosfet | | |
| 3 | DFD2N60 | N-Channel MOSFET
DFD2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.1A
3. Source
General Description
This N-channe DnI mosfet | | |
| 4 | DFD30N06 | N-Channel MOSFET
DFD30N06
N-Channel MOSFET
Features
■ ■ ■ ■ ■ ■
Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range
2.Drain
BVDSS = 60V
1.Gate 3.Source
RDS(ON) = 0 DnI mosfet | | |
| 5 | DFD30T | 3.0A Power Rectifier Sanyo Semicon Device rectifier | |
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