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DFB5433 PDF Datasheet

The DFB5433 is Fast Recovery Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 DFB5433
Fast Recovery Diode

DFB54 DFB54 Fast Recovery Diode Replaces March 1998 version, DS4219-2.4 DS4219-3.0 January 2000 APPLICATIONS s Power Supplies s Freewheel Diode s Battery Chargers s D.C. Motor Control s Welding s Rectification KEY PARAMETERS VRRM 3500V IF(AV) 2135A IFSM 20000A Qr 1500µC trr 6.5µs FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS

Dynex
Dynex
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2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N5432 2N5433 2N5434 VGS(off) (V) –4 to –10 –3 to –9 –1 to –4 rDS(on) Max (W) 5 7 10 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 2.5 2.5 2.5 FEATURES D D D D D Low On-Resistance: 2N5432 <5

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2N5433   (2N5xxx) JFET

N-Channel Metal Can JFET’s Part No. BVGSS Min. (V) VP Min. (V) @ Max. (V) (V) VD S & 2N5432 2N5433 2N5434 25 4.0 3.0 1.0 10.0 Part No. w w 2N3684 2N3686 2N3822 w .D BV GSS Min. (V) 50 50 50 40 35 30 30 30 25 at h S a (V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0 ee 9.0 4.0

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New Jersey Semiconductor
New Jersey Semiconductor
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2N5433   N-Channel Silicon Junction Field-Effect Transistor

8/2014 2N5432, 2N5433, 2N5494 N-Channel Silicon Junction Field-Effect Transistor ∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -25V Continuous Forward Gate Current 100 mA Conti

InterFET
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