No | Part number | Description ( Function ) | Manufacturers | |
1 | D357 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD357 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1 |
INCHANGE |
0  1  2  3  4  5  6  7  8 9 |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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ON Semiconductor |
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