No | Part number | Description ( Function ) | Manufacturers | |
1 | D2642 | NPN Transistor - 2SD2642 Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V 13.0min B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) sAbsolu |
Sanken electric |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to D2642 |
Part No | Description ( Function) | Manufacturers | |
2SD2642 | Silicon NPN Transistor Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V 13.0min |
Sanken Electric |
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2SD2642 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 110V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage: VCE(sat) |
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2N2642 | DUAL AMPLIFIER TRANSISTORS NPN SILICON |
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