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Datasheet D2562 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | D2562 | NPN Transistor - 2SD2562 INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (I |
Inchange Semiconductor |
D2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
D2627 | NPN Triple Diffused Planar Silicon Transistor |
Sanyo Semicon Device |
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D2822 | Dual Power Amplifier |
Shaoxing Silicore |
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D2394 | NPN Transistor, 3A, 60V - 2SD2394 |
ROHM Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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