| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | D256 | NPN Transistor - 2SD256
|
 ETC |
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| 2 | D2560 | NPN Transistor - 2SD2560 Equivalent circuit C Darlington 2SD2560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=5V IC=30mA VCE=4V, IC=10A IC=10A, IB=10mA IC=10A, IB=10mA VCE=12V, IE=–2A VCB=10V, f=1MHz 2SD2560 100max 100max 150min 5000min∗ 2.5max 3.0max 70typ 120typ V V MHz pF 20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 |
 Sanken electric |
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| 1 | D2562 | NPN Transistor - 2SD2562 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649 APPLICATIONS ·Designed for se |
 Inchange Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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