No | Part number | Description ( Function ) | Manufacturers | |
1 | D2236 | NPN Transistor - 2SD2236 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE |
Inchange Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
2SD2236 | Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for drive |
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1S2236 | SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
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2222369xxxxx | Metallized polyester film capacitors BCcomponents DATA SHEET MKT 368/369 Metallized polyester film capacitors Maintenance type Supersedes data of April 1999 File under BCcomponents, BC05 2000 Feb 01 BCcomponents Maintenance type Metallized polyester film capacitors MKT RA |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |