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Datasheet D20SB80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D20SB80 | D20SB10 - D20SB100 LESHAN RADIO COMPANY
LTD.
D20SB10(RBV2002S) Thru D20SB100(RBV2007S)
FEATURES
Plastic Package has Underwriters Laboratory Flammability Classification 94V-0
This series
is UL listed under the Recognized
Component index,file number E231047 Single-in-line package High current cap |  LRC | data |
| 2 | D20SB80 | Single-phase Silicon Bridge Rectifier SIYU R
塑封硅整流桥堆
反向电压 200---800V 正向电流 20 A
D5
3.0*45 0 30.3 29.7 4.8 4.4 3.8 3.4
D20SB20......D20SB80
Single-phase Silicon Bridge Rectifier
Reverse Voltage 200 to 800V Forward Current 20A 特征 Features
·反向漏电流低 Low reverse leakage High forward surge capabil |  SIYU | rectifier |
| 3 | D20SB80 | Molding Single-Phase Bridge Rectifier Elektronische Bauelemente
D20SB10 ~ D20SB100
100 V ~ 1000 V 20.0 Amp High Current Glass Passivated
Molding Single-Phase Bridge Rectifier
RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
Plastic Package has Underwriters Laboratory Flammability Cla |  SeCoS | rectifier |
D20 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D20 | Memory Micromodules General Information for D1/ D2 and C Packaging D10, D15, D20, D22, C20, C30 MICROMODULES
Memory Micromodules General Information for D1, D2 and C Packaging
s
Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte  STMicroelectronics data | | |
| 2 | D200 | SIP DC/DC Converters
D200 Series
Single & Dual Output Miniature, 2W SIP DC/DC Converters
Electrical Specifications
Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.
Input
Key Features:
Paramet  uPD converter | | |
| 3 | D2001UK | METAL GATE RF SILICON FET TetraFET
D2001UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr  Seme LAB gate | | |
| 4 | D2002 | METAL GATE RF SILICON FET TetraFET
D2002UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss Seme LAB gate | | |
| 5 | D2002- | Stereo Headphone Amplifier w headphone equipment 3V use).
at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo
dual OCL power a mplifier, and a ripple filter.
STEREO aS HEADPHONE AMPLIFIER £¨
e e h
U 4 t
m o .c
Silicore
3V USE£©
Outline Drawing
D2002
It is built in dual auto -reverse prea mp lifie  Shaoxing Silicore Technology amplifier | | |
| 6 | D2002UK | METAL GATE RF SILICON FET TetraFET
D2002UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss Seme LAB gate | | |
| 7 | D2003 | METAL GATE RF SILICON FET TetraFET
D2003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B H C 2 3 1 A D E 5 4 F G
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
J K
I
N
M
O
• SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BI Seme LAB gate | |
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| Número de pieza | Descripción | Fabricantes | |
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