Datasheet D2025 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	D2025	Rectifiers U . .L C RE OG 1639 #E 7 Z NI ED le Fi E7 TO-220 Isolated A C Rectifiers (15 A to 25 A) E7 General Description Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically-isolated TO-220 package, these rectifiers may be used in comm	LittelFuse	rectifier
2	D2025	Stereo Audio AMplifier Silicore STEREO AUDIO AMPLIFIER DESCRIPTION The D2025 is a monolithic integrated audio amplifier in a 16-pin plastic dual in line package. It is designed for portable cassette players and D2025 radios. FEATURE z z z z Working Voltage down to 3V Few External components High Channel isolatio n Vo l	Shaoxing Silicore Technology	amplifier
3	D2025	NPN Transistor, 2SD2025 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2025 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SB1344 APPLICATIONS ·For low frequency power amplifier and power driver	SavantIC	data
4	D2025L	Rectifiers U.L. REFCileO#GE7N16IZ39ED E7 TO-220 Isolated AC E7 General Description Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200 V to 1000 V. Due to the electrically-isolated TO-220 package, these rectifiers may be used in common anode or common cathode circuits using onl	Teccor	rectifier
5	D2025UK	Metal Gate RF Silicon FET TetraFET D2025UK METAL GATE RF SILICON FET MECHANICAL DATA C 1 2 4 A 3 B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 400MHz SINGLE ENDED FEATURES D E F • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DW PIN 1 PIN 3 DRAIN GATE PIN 2 PIN 4 SOURC	Semelab	gate

D20 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	D20	Memory Micromodules General Information for D1/ D2 and C Packaging D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte	STMicroelectronics	data
2	D200	SIP DC/DC Converters D200 Series Single & Dual Output Miniature, 2W SIP DC/DC Converters Electrical Speciﬁcations Speciﬁcations typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Speciﬁcations subject to change without notice. Input Key Features: Paramet	uPD	converter
3	D2001UK	METAL GATE RF SILICON FET TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr	Seme LAB	gate
4	D2002	METAL GATE RF SILICON FET TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss	Seme LAB	gate
5	D2002-	Stereo Headphone Amplifier w headphone equipment 3V use). at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo dual OCL power a mplifier, and a ripple filter. STEREO aS HEADPHONE AMPLIFIER £¨ e e h U 4 t m o .c Silicore 3V USE£© Outline Drawing D2002 It is built in dual auto -reverse prea mp lifie	Shaoxing Silicore Technology	amplifier
6	D2002UK	METAL GATE RF SILICON FET TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss	Seme LAB	gate
7	D2003	METAL GATE RF SILICON FET TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D E 5 4 F G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN J K I N M O • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BI	Seme LAB	gate

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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