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Datasheet D2012 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | D2012 | Si NPN Transistor
YOUDA TRANSISTOR
Si NPN TRANSISTOR¡ª
DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity
D2012
D2012
PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base
ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYM |
 Wuxi Youda Electronics |
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| 2 | D2012 | NPN Transistor - 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
• Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteri |
 Toshiba Semiconductor |
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| 1 | D2012UK | METAL GATE RF SILICON FET TetraFET
D2012UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crs |
 Seme LAB |
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