No | Part number | Description ( Function ) | Manufacturers | |
1 | D1695 | NPN Transistor - 2SD1695 DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm) incorporates a dumper diode between the collector and emitter and a constant voltage diode an |
NEC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to D1695 |
Part No | Description ( Function) | Manufacturers | |
2SD1695 | NPN Silicon Transistor DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the co |
NEC |
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2SA1695 | Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) 2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1695 –140 –140 –6 –10 –4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General |
Sanken electric |
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2SA1695 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC4468 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter F |
SavantIC |
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2SA1695 | POWER TRANSISTOR INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4468 APPLICATIONS ·Designed for audio and general purpose application |
Inchange Semiconductor |
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2SB1695 | Low frequency amplifier 2SB1695 Transistors Low frequency amplifier 2SB1695 zApplication Low frequency amplifier Driver zExternal dimensions (Units : mm) Each lead has same dimensions 0.4 1.0MAX 0.85 0.7 zFeatures 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA (3 |
ROHM Semiconductor |
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