| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | D1664 | NPN Transistor - 2SD1664 Transistors Medium Power Transistor(32V , 1A) 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC /I B = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 http:// Transistors FElectric |
 ROHM Semiconductor |
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Recommended search results related to D1664 |
| Part No | Description ( Function) | Manufacturers | |
| 2DD1664P | 32V NPN SUFACE MOUNT TRANSISTOR Features • BVCEO > 32V • Max Continuous Current IC = 1A • Epitaxial Planar Die Construction • Complementary PNP Type Available (2DB1132) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead |
 Diodes |
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| 2DD1664Q | 32V NPN SUFACE MOUNT TRANSISTOR Features • BVCEO > 32V • Max Continuous Current IC = 1A • Epitaxial Planar Die Construction • Complementary PNP Type Available (2DB1132) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead |
Diodes |
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| 2DD1664R | 32V NPN SUFACE MOUNT TRANSISTOR Features • BVCEO > 32V • Max Continuous Current IC = 1A • Epitaxial Planar Die Construction • Complementary PNP Type Available (2DB1132) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Totally Lead |
Diodes |
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| 2SD1664 | Medium Power Transistor (32V/ 1A) Transistors Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) FAbsolu |
ROHM Semiconductor |
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| 2SD1664 | MEDIUM POWER NPN TRANSISTOR UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE(sat): VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER 2:COLLECTOR |
 Unisonic Technologies |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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