No | Part number | Description ( Function ) | Manufacturers | |
1 | D1485 | NPN Transistor - 2SD1485 Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one sc |
Panasonic Semiconductor |
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Recommended search results related to D1485 |
Part No | Description ( Function) | Manufacturers | |
2SD1485 | Silicon NPN triple diffusion planar type(For high power amplification) Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO |
Panasonic Semiconductor |
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2SD1485 | Silicon NPN Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1485 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 APPLICATIONS ·Designed for high power amplifier ap |
Inchange Semiconductor |
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SD1485 | RF & MICROWAVE TRANSISTORS TV BAND III APPLICATIONS |
Microsemi Corporation |
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American Microsemiconductor |
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2N1485 | NPN SILICON MEDIUM POWER TRANSISTOR 2N1483 – 2N1486 Available on commercial versions NPN Silicon Medium Power Transistor Qualified per MIL-PRF-19500/180 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Qualified Levels: JAN and JANTX Important: For the l |
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