No | Part number | Description ( Function ) | Manufacturers | |
1 | D1416 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 APPLICATIONS ·Hammer driver,pulse motor drive |
INCHANGE |
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Recommended search results related to D1416 |
Part No | Description ( Function) | Manufacturers | |
2SD1416 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000( |
INCHANGE |
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AD14160 | Quad-SHARC DSP Multiprocessor Family a PERFORMANCE FEATURES ADSP-21060 Core Processor (. . . ؋4) 480 MFLOPS Peak, 320 MFLOPS Sustained 25 ns Instruction Rate, Single-Cycle Instruction Execution–Each of Four Processors 16 Mbit Shared SRAM (Internal to SHARCs) 4 Gigawords Addressable Off-Module Memory Sixteen 40 Mb |
Analog Devices |
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AD14160L | Quad-SHARC DSP Multiprocessor Family a PERFORMANCE FEATURES ADSP-21060 Core Processor (. . . ؋4) 480 MFLOPS Peak, 320 MFLOPS Sustained 25 ns Instruction Rate, Single-Cycle Instruction Execution–Each of Four Processors 16 Mbit Shared SRAM (Internal to SHARCs) 4 Gigawords Addressable Off-Module Memory Sixteen 40 Mb |
Analog Devices |
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EID1416-12 | 14.0-16.0 GHz 12-Watt Internally Matched Power FET EID1416-12 UPDATED 12/06/2006 14.0-16.0 GHz 12-Watt Internally Matched Power FET Excelics FEATURES • • • • • • 14.0– 16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB |
Excelics Semiconductor |
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EID1416A1-8 | 14.0-16.0 GHz 8-Watt Internally-Matched Power FET EID1416A1-8 UPDATED 09/20/2007 14.0-16.0GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • 14.0-16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression |
Excelics Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |