No | Part number | Description ( Function ) | Manufacturers | |
1 | D1415A | NPN Transistor - 2SD1415A 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to D1415A |
Part No | Description ( Function) | Manufacturers | |
2SD1415 | Silicon NPN Power Transistors Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1415 DESCRIPTION ¡¤ With TO-220Fa package ¡¤ High DC current gain ¡¤ Low saturation voltage ¡¤ Complement to type 2SB1020 APPLICATIONS ¡¤ ¡¤ High power switching applications |
JMnic |
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2SD1415A | Silicon NPN Triple Diffused Type TRANSISTOR 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1 |
Toshiba Semiconductor |
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2SD1415A | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A DESCRIPTION ·With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor |
SavantIC |
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EID1415A1-12 | 14.40-15.35 GHz 12-Watt Internally-Matched Power FET EID1415A1-12 UPDATED 07/12/2007 14.40-15.35 GHz 12-Watt Internally-Matched Power FET FEATURES • 14.40-15.35 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +41.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression |
Excelics Semiconductor |
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EID1415A1-5 | 14.40-15.35 GHz 5-Watt Internally-Matched Power FET EID1415A1-5 UPDATED 07/12/2007 14.40-15.35 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Co |
Excelics Semiconductor |
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Part Number | Function | Manufacturers | |
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Vishay |
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ON Semiconductor |
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