No | Part number | Description ( Function ) | Manufacturers | |
1 | D1407 | NPN Transistor - 2SD1407 2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO |
Wing Shing Electronic |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to D1407 |
Part No | Description ( Function) | Manufacturers | |
2SD1407 | PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) 2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipa |
Wing Shing Computer Components |
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2SD1407 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SB1016 APPLICATIONS ·Power amplifier applications PIN |
SavantIC |
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2SD1407A | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A Absolute M |
Toshiba Semiconductor |
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HD14070 | Quadruple Exclusive-OR Gate/ Quadruple Exclusive-NOR Gate Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) DP-14 Conforms Conforms 0.97 g Unit: mm 10.06 10.5 Max 14 8 5.5 1 |
Hitachi Semiconductor |
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HD14070B | Quadruple Exclusive-OR Gate/ Quadruple Exclusive-NOR Gate Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) DP-14 Conforms Conforms 0.97 g Unit: mm 10.06 10.5 Max 14 8 5.5 1 |
Hitachi Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |