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Datasheet D12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 118 | D12000W | Standard Recovery Diode SEMICONDUCTOR
RRooHHSS
SEMICONDUCTOR
Fig.1 Maximuam forward voltage drop characteristics
D12000W Series RRooHHSS
Fig.2 Surge forward current vs pulse length
Fig.3 Forward power loss vs. Average forward current sine waveform
Fig.4 Forward power loss vs. Average forward current,square waveform
F |
 nELL |
 |
| 117 | D1201 | METAL GATE RF SILICON FET TetraFET
D1201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW |
 Seme LAB |
|
| 116 | D1201UK | METAL GATE RF SILICON FET TetraFET
D1201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW |
Seme LAB |
|
| 115 | D1202 | METAL GATE RF SILICON FET TetraFET
D1202UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW |
Seme LAB |
|
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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