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D1006 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
2 D1006
2SD1006

DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and

Renesas
Renesas
pdf
1 D1006UK
METAL GATE RF SILICON FET

TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A E 1 2 3 F G 6 J 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN D H M Q N K O P • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 14 dB MINIMUM DV PIN

Seme LAB
Seme LAB
pdf



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