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Datasheet CJ8820 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CJ8820 | N-Channel Enhancement Mode Field Effect Transistor CJ8820
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION The CJ8820 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional lo |
 ZPSEMI |
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| 1 | CJ8820 | Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
21mΩ@10V 24mΩ@4.5V 28mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V
ID
7A
DESCRIPTION
The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low |
 JCET |
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