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CJ5853DCB PDF Datasheet

The CJ5853DCB is P-channel MOSFET And Schottky Barrier Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 CJ5853DCB
P-channel MOSFET and Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DCB P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR -20V 20V RDS(on)MAX 110mΩ@-4.5V 160mΩ@-2.5V 240mΩ@-1.8V  / ID/IO -2.7A  0.5A   DFNWB3×2-08L-B FEATURE z Independent Pinout to Each Device to Ease Circuit Design z Ultra low V F z Featuring a MOSFET an

JCET
JCET
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Recommended search results related to CJ5853DCB

Part No Description ( Function) Manufacturers PDF
CJ5853DC   P-channel MOSFET and Schottky Barrier Diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DC P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR -20V 20V RDS(on)MAX 110mΩ@-4.5V 160mΩ@-2.5V 240mΩ@-1.8V  / ID/IO -2.7A  1A   DFNWB3×2-08L-B C D FEATU

JCET
JCET
datasheet pdf
2N5853   PNP Transistor

10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1 10 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N4907 2N4908 2N5621 2N5737 2N57

SSDI
SSDI
datasheet pdf
AM5853   P-CHANNEL MOSFET WITH 0.12V SCHOTTKY DIODE MOSFET

AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES 

AiT Semiconductor
AiT Semiconductor
datasheet pdf
AM5853J8R   MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE

AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES 

AiT Semiconductor
AiT Semiconductor
datasheet pdf
AM5853J8VR   MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE

AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES 

AiT Semiconductor
AiT Semiconductor
datasheet pdf

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1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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