No | Part number | Description ( Function ) | Manufacturers | |
5 | CJ3401 | P-Channel Enhancement Mode MOSFET CJ3401 Feature -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package P-Channel Enhancement Mode MOSFET Applications SOT-23 ● Power Management Portable Equipment and Battery Powered Systems |
ZPSEMI |
|
4 | CJ3401 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1 D 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Paramete |
JCST |
|
3 | CJ3401-HF | MOSFET ( Transistor ) MOSFET CJ3401-HF (P-Channel ) Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free Features -P-Channel -High dense cell design for extremely low RDS(ON) -Exceptional on-resistance and miximum DC current capability. Mechanical data -Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. Circuit diagram D Comchip SMD Diode Spe |
Comchip |
|
2 | CJ3401A | P-Channel Enhancement Mode Field Effect Transistor CJ3401A SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1A SOT-23 1. GATE 2. SOURCE 3. DRAIN G D S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source V |
ZPSEMI |
|
1 | CJ3401A | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1A SOT-23 1. GATE 2. SOURCE 3. DRAIN G D S Maximum ratings ( Ta=25℃ unless otherwise noted) Pa |
JCST |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |