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Datasheet CJ3400 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | CJ3400 | N-Channel Enhancement Mode MOSFET CJ3400
Feature
30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V.
RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package.
N-Channel Enhancement Mode MOSFET
SC-59
Applica |
 ZPSEMI |
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| 4 | CJ3400 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400 N-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability
MARKING: R0
SOT-23
1. GATE 2. SOU |
 JCST |
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| 3 | CJ3400-HF | MOSFET ( Transistor ) MOSFET
CJ3400-HF (N-Channel )
Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free
Features
- N-Channel Enhancement mode field effect transistor. - High dense cell design for extermely low RDS(ON) - Exceptional on-resistance and maximum
DC current capability.
Mechanical data
- C |
 Comchip |
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| 2 | CJ3400A | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400A N-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
30 V
RDS(on)MAX
32mΩ@10V 38mΩ@4.5V
45mΩ@2.5V
ID
5.8A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
FEATURE
APPLICATION
z High dense cell |
 JCET |
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