Datasheet CJ2101-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CJ2101-G	MOSFET ( Transistor ) MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V ID -1.4A Features - P-Channel MOSFET - Leading trench technology for low RDS(on) extending battery life Mechanical data - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, meth	Comchip

CJ210 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CJ2101	P-Channel MOSFET CJ2101 SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel MOSFET FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life SOT-323 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z High Side Load Switch z Charging Circuit z Single Cell Battery Applications such as Ce	ZPSEMI
CJ2102	MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2102 N-Channel 20-V(D-S) MOSFET FEATURE z TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: TS2 Maximum ratings (Ta=25℃ unless otherwise	JCST
CJ2102	N-Channel 20-V(D-S) MOSFET CJ2102 SOT-323 Plastic-Encapsulate MOSFETS CJ2102 N-Channel 20-V(D-S) MOSFET FEATURE z TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: TS2 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate	ZPSEMI

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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