Datasheet CHA8100 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CHA8100	X-band HBT High Power Amplifier CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatc	United Monolithic Semiconductors

CHA8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CHA8610-99F	15W X Band High Power Amplifier CHA8610-99F 15W X Band High Power Amplifier GaN Monolithic Microwave IC Description The CHA8610-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 15W of saturated output power and 40% of power added efficiency. It is designed for a	United Monolithic Semiconductors
CHA8100	X-band HBT High Power Amplifier CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high r	United Monolithic Semiconductors
CHA8012-99F	C Band High Power Amplifier CHA8012-99F C Band High Power Amplifier GaAs Monolithic Microwave IC Description CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides typically 12W of output power on the 5.2 to 6.0GHz frequency band associated	United Monolithic Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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