No | Part number | Description ( Function ) | Manufacturers | |
1 | CHA5266-QDG | 10-16 GHz Medium Power Amplifier CHA5266-QDG 10-16 GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5266-QDG is a three stage monolithic GaAs medium power amplifier. It is designed for a wide range of applications, from professional to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through th |
United Monolithic Semiconductors |
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Part No | Description ( Function) | Manufacturers | |
CHA5266-99F | 10-16 GHz Medium Power Amplifier CHA5266-99F 10-16 GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commerc |
United Monolithic Semiconductors |
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1N5266 | Small Signal Zener Diodes www.vishay.com 1N5221 to 1N5267 Vishay Semiconductors Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. 2.4 to 75 Test current IZT 1.7 to 20 VZ specification Thermal equilibrium Int. construction Single UNIT V mA FEATURES • Silicon p |
Vishay |
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1N5266 | SILICON 500 mW ZENER DIODES |
Microsemi Corporation |
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1N5266 | ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1N5221B-LCC3 TOB-LCC 1N5281B-LCC3 MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) ZENER VOLTAGE REGULATOR DIODE IN |
Seme LAB |
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1N5266 | Zener Diode ( Rectifier ) 1N5225 THRU 1N5267 ZENER DIODES FEATURES DO-35 min. 1.083 (27.5) ♦ Silicon Planar Power Zener Diodes ♦ Standard Zener voltage tolerance is ± 5% with a “B” suffix. Other tolerances are available upon request. max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) ♦ These |
General Semiconductor |
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