No | Part number | Description ( Function ) | Manufacturers | |
1 | CHA2411-QDG | GaAs Monolithic Microwave IC CHA2411-QDG RoHS COMPLIANT 20-25GHz LNA GaAs Monolithic Microwave IC In QFN package Description The CHA2411 is a monolithic Low noise Amplifier in K band providing 26 dB gain from a single bias supply +5V with a noise figure of 2.5 dB. All the active devices are self biased on chip. The circuit is manufactured with a standard GaAs PHEMT process: 0.25µm ga |
United Monolithic Semiconductors |
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Part No | Description ( Function) | Manufacturers | |
2N2411 | PNP SILICON TRANSISTOR DATA SHEET 2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL Collector-Base Voltage Collector-Emitter |
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2SC2411 | Silicon Epitaxial Planar Transistor BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Production specification 2SC2411 Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor ORDERING INFORMATION Type No. 2SC2411 Marking CP/CQ/CR SOT-23 Package Code |
Galaxy Semi-Conductor |
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2SC2411 | NPN Transistor 2SC2411 Elektronische Bauelemente NPN Transistor Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES 1 Base n 3 Collector Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0 |
SeCoS |
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2SC2411 | TRANSISOR 2SC2411 TRANSISOR(NPN) FEATURES z z z SOT-23 1. BASE 2. EMITTER 3. COLLECTOR High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Colle |
Jin Yu Semiconductor |
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