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Datasheet CGY13A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CGY13A | Diode, Rectifier |  American Microsemiconductor | diode |
CGY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CGY0819 | GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation) CGY 0819
GaAs MMIC
l l l l l l
Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains Power ramp control Input matched to 50 ohms, simple out  Siemens Semiconductor Group amplifier | | |
| 2 | CGY0918 | GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) CGY 0918
GaAs MMIC
l l l l
Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped)
Package
CGY 0918
CGY 0918
Q Siemens Semiconductor Group amplifier | | |
| 3 | CGY1032 | 1 GHz - 32 dB gain GaAs push-pull amplifier CGY1032
1 GHz, 32 dB gain GaAs push-pull amplifier
Rev. 1 — 10 February 2011 Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFE  NXP Semiconductors amplifier | | |
| 4 | CGY1041 | 1 GHz - 21 dB gain GaAs push-pull amplifier CGY1041
1 GHz, 21 dB gain GaAs push-pull amplifier
Rev. 1 — 10 February 2011 Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFE NXP Semiconductors amplifier | | |
| 5 | CGY1043 | 1 GHz - 23 dB gain GaAs push-pull amplifier CGY1043
1 GHz, 23 dB gain GaAs push-pull amplifier
Rev. 1 — 10 February 2011 Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFE NXP Semiconductors amplifier | | |
| 6 | CGY1047 | 27 dB gain GaAs push-pull amplifier CGY1047
1 GHz, 27 dB gain GaAs push-pull amplifier
Rev. 01 — 30 July 2009
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field NXP Semiconductors amplifier | | |
| 7 | CGY11A | Diode, Rectifier American Microsemiconductor diode | |
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