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Datasheet CGHV96050F1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGHV96050F1 | Input/Output Matched GaN HEMT CGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other tec |
CREE |
CGHV9605 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGHV96050F1 | Input/Output Matched GaN HEMT |
CREE |
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Número de pieza | Descripción | Fabricantes | |
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