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Datasheet CGHV59350 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGHV59350 | GaN HEMT PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the C |
Cree |
CGHV59 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGHV59350 | GaN HEMT |
Cree |
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CGHV59070 | RF Power GaN HEMT |
Cree |
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Número de pieza | Descripción | Fabricantes | |
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