Datasheet CGHV40030 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CGHV40030	GaN HEMT CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. Th	Cree

CGHV40 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CGHV40030	GaN HEMT CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplif	Cree
CGHV40050	GaN HEMT CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applica	Cree

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Número de pieza	Descripción	Fabricantes	PDF
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