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Datasheet CGHV27100 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGHV27100 | GaN HEMT
CGHV27100
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telec |
Cree |
CGHV27 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGHV27030S | GaN HEMT |
CREE |
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CGHV27200 | GaN HEMT |
Cree |
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CGHV27015S | GaN HEMT |
Cree |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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