No | Part number | Description ( Function ) | Manufacturers | |
1 | CGHV27015S | GaN HEMT CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT device is unmatched so it is suitab |
Cree |
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AHP27015S | HYBRID - HIGH RELIABILITY DC/DC CONVERTER PD-97181C HYBRID - HIGH RELIABILITY DC/DC CONVERTER Description The AHP Series of DC/DC converters feature high power density without derating over the full military temperature range. This series is offered as lower cost alternatives to the legendary AFL series with improved pe |
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AHP27015S | HYBRID - HIGH RELIABILITY DC/DC CONVERTER PD-97181C HYBRID - HIGH RELIABILITY DC/DC CONVERTER Description The AHP Series of DC/DC converters feature high power density without derating over the full military temperature range. This series is offered as lower cost alternatives to the legendary AFL series with improved pe |
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CGH27015F | GaN HEMT PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GH |
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MRF6S27015GNR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable |
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MRF6S27015NR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |