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Datasheet CGHV22100 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGHV22100 | GaN HEMT
CGHV22100
100 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and |
Cree |
CGHV22 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGHV22200 | GaN HEMT |
Cree |
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CGHV22100 | GaN HEMT |
Cree |
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Número de pieza | Descripción | Fabricantes | |
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