No | Part number | Description ( Function ) | Manufacturers | |
1 | CGH55030F1 | GaN HEMT CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX and BWA amplifier applications. The transistor is available |
Cree |
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Recommended search results related to CGH55030F1 |
Part No | Description ( Function) | Manufacturers | |
CGH55030P1 | GaN HEMT CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F |
Cree |
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