No | Part number | Description ( Function ) | Manufacturers | |
1 | CGH31240F | GaN HEMT CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied |
Cree |
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