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CGH31240F PDF Datasheet

The CGH31240F is Gan Hemt. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 CGH31240F
GaN HEMT

CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied

Cree
Cree
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CD431240A   POW-R-BLOK Dual SCR Isolated Module 40 Amperes / Up to 1600 Volts

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TSOP31240   IR Receiver Modules

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