No | Part number | Description ( Function ) | Manufacturers | |
1 | CEV2306 | N-Channel Enhancement Mode Field Effect Transistor CEV2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 2A, RDS(ON) = 65mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-323 package. D DS G SOT-323(SC-70) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Dr |
CET |
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