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Datasheet CES2317 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CES2317 | P-Channel Enhancement Mode Field Effect Transistor CES2317
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package.
DS |
CET |
CES2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CES2301 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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CES2362 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CES2310 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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Número de pieza | Descripción | Fabricantes | |
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