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Datasheet CES2306 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CES2306 | N-Channel Enhancement Mode Field Effect Transistor CES2306
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V.
High dense cell design for extremely low RDS(ON). Lead-free plating ; RoHS compliant. Rugged and reliable. SOT-23 package.
DS G
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CET |
CES2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CES2301 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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CES2362 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CES2310 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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Número de pieza | Descripción | Fabricantes | |
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