|
|
Datasheet CEM6659 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEM6659 | Dual Enhancement Mode Field Effect Transistor CEM6659
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V.
-60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
Hig |
CET |
CEM6 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEM6867 | Dual P-Channel Enhancement Mode Field Effect Transistor |
CET |
|
CEM6080 | Dual Enhancement Mode Field Effect Transistor |
CET |
|
CEM6861 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
Esta página es del resultado de búsqueda del CEM6659. Si pulsa el resultado de búsqueda de CEM6659 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |